Precision Mould Profile Grinding of Silicon Carbide (SiC)

🕜 50% Higher Machining Efficiency | ⚙️ 3x Longer Tool Life
  • Difficulties in Machining
  • HIT Achievements
  • Industry Application
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What makes Silicon Carbide (SiC) difficult to machine?



SiC (Silicon Carbide) has a Mohs hardness rating of 9, and it is an exceptional material choice for high-precision mechanical components.

This material bears excellent chemical and mechanical stability with high-temperature and thermal shock resistance, which also makes it an ideal material for semiconductor fabrication commodities, such as SiC substrates, SiC wafer susceptors, SiC wafer carriers, SiC E-chucks, etc.

However, due to the high hardness and brittleness of silicon carbide, the challenge of grinding SiC resides in time-consuming process and poor tool life.  If the grinding forces are not well-controlled (due to serious cumulative ceramic material particles stuck in the pores of grinding tool) during the process, the process would take more time with damaged workpiece quality and poor tool life.
 
 

☑️ Profile Grinding of Silicon Carbide (SiC): Machining Information

 
    Profile Grinding of Silicon Carbide (SiC): Machining Information   
  Material   SiC (Silicon Carbide)
  Feature   From OD 60 x ID 13 x T 11mm to OD 51 x ID 20 x T 6mm and (step) OD 30 x ID 20 x T5mm
  Process   Profile Grinding  
  Ultrasonic Toolholder           BBT-30-GEN-06
  Rotating Speed   17,000rpm
  Tool Selection   #100 Φ10mm diamond grinding tool  
the profile grinding of silicon carbide from the original raw material to the final workpiece
(Figure 1. the profile grinding of silicon carbide from the original raw material to the final workpiece) 

 

HIT's Goal in Profile Grinding of Silicon Carbide (SiC)


Through the assistance of HIT ultrasonic-assisted machining technology, the goal is to reduce the total process time and tool wear, while maintaining acceptable workpiece quality in the profile grinding process of Silicon Carbide (SiC).



 

Ultrasonic-Assisted Profile Grinding of Silicon Carbide (SiC): Machining Results

 

Profile Grinding of Silicon Carbide (SiC): Machining Efficiency

with HIT ultrasonic-assisted profile grinding of silicon carbide, the overall machining efficiency was 50% higher
(Figure 2. with HIT ultrasonic-assisted profile grinding of silicon carbide, the overall machining efficiency was 50% higher)

 
  • The high frequency micro-vibraiton of ultrasonic machining technology helps reduce grinding force, which allows for cutting parameters optimization.
  • The process time per workpiece was reduced from 6 hours to 3 hours, representing a 50% improvement in machining efficiency.  The machining process becomes significantly faster while maintaining high precision and stability.


 

Profile Grinding of Silicon Carbide (SiC): Tool Life

with HIT ultrasonic-assisted profile grinding of silicon carbide, the tool life was 3 times longer
(Figure 3. with HIT ultrasonic-assisted profile grinding of silicon carbide, the tool life was 3 times longer)

 
  • The reduction of grinding force, along with better ceramic particles flushing, help reduce friction and heat generation, leading to less tool wear and more stable cutting conditions.
  • This not only lowers tool replacement costs but also ensures consistent workpiece quality across a greater number of parts.
  • The number of completed workpieces per tool increased from 1 to 3, achieving a three times extension in overall tool life.


 

HIT Ultrasonic Machining Technology Achievement in Profile Grinding of Silicon Carbide (SiC)


🕜 50% Higher Machining Efficiency
⚙️ 3x Longer Tool Life

 

Profile Grinding of Silicon Carbide (SiC): Industry Application

 

Profile Grinding of SiC (Silicon Carbide) is applied in the Precision Machinery and Semiconductor industry, especially for shaft seals, SiC wafer susceptors, SiC wafer carriers, SiC E-chucks (electrostatic chucks), etc.


SiC (Silicon Carbide) has a Mohs hardness rating of 9, and it is an exceptional material choice for high-precision mechanical components.

This material bears excellent chemical and mechanical stability with high-temperature and thermal shock resistance, this makes it an ideal material for shaft seals in precision machinery industry.  Its extraordinary material properties also make it become popular for semiconductor fabrication commodities, such as SiC substrates, SiC wafer susceptors, SiC wafer carriers, SiC E-chucks, etc.  Since the stability of manufacturing process and product quality, as well as yield rate are all highly valued in the semiconductor industry, the chamber components which have direct contact with the wafer often have extremely high and strict standards on its product quality. 

However, due to the high hardness and brittleness of silicon carbide, the challenge of grinding SiC resides in time-consuming process and poor tool life.  If the grinding forces are not well-controlled (due to serious cumulative ceramic material particles stuck in the pores of grinding tool) during the process, the process would take more time with damaged workpiece quality and poor tool life.


That was when HIT's Ultrasonic Machining Module came to help!  HIT offers a comprehensive solution in machining advanced materials.  With the assistance of HIT's Ultrasonic Machining Technology, clients stopped worrying about poor workpiece quality while trying to speed up the processing time.  The machining efficiency can be greatly enhanced while maintaining fine workpiece quality and the stability in tool life.  HIT assures its clients of not only matching up with their requirements, but also achieving even better outcomes!



💡 Learn more about HIT Ultrasonic Machining of SiC cases:

💡 Introduction on HIT Ultrasonic Machining of advanced materials: