Semiconductor Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder

🕜 Spindle Load - 2.3x lower, reflecting on the reduction in grinding force | 📈 Surface Quality - 1.6x better, with no tool marks | ⚙️ Tool Life - greatly reduced tool wear
  • Difficulties in Machining
  • HIT Achievements
  • Industry Application
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What makes SiC (Silicon Carbide) difficult to machine?



SiC (Silicon Carbide) has a Mohs hardness rating of 9, and it is an exceptional material choice for high-precision mechanical components.

This material bears excellent chemical and mechanical stability with high-temperature and thermal shock resistance, which also makes it an ideal material for semiconductor fabrication commodities, such as SiC substrates, SiC wafer susceptors, SiC wafer carriers, SiC E-chucks, etc.

However, due to the high hardness and brittleness of silicon carbide, the risk of surface grinding of SiC resides in poor surface quality with poor surface roughness and massive tool marks.  If the grinding force is not well-controlled (due to serious cumulative ceramic material particles stuck on wheel surface) during the process, it can cause serious tool wear and poor workpiece quality.

 
 

☑️ Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder: Machining Information

 
    Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder:  Machining Information     
  Material   Silicon Carbide (SiC)
  Feature   Surface Grinding Ae 10mm _ Ap 0.08mm
  Parameters   S 3,000rpm _ F 300mm/min _ Ultrasonic Power Level 100%    
  Ultrasonic Tool Holder           HBT40-W01 Grinding Wheel Toolholder 
  Tool Selection   #400 Φ100mm-T40mm Metal bond diamond grinding wheel   


 

【NEW PRODUCT - HBT-40 Ultrasonic Grinding Wheel Toolholder】For Surface Grinding of Silicon Carbide (SiC)




--- As the Secret Weapon to Enter the Supply Chain of Semiconductor Industry ---

🔹 Best applied in the rough grinding of semiconductor advanced-material
🔹 Overall Machining Efficiency: 2 - 3x Higher
🔹 Material Removal Rate (MRR): More than 3x Higher
🔹 Great reduction in production costs and energy consumption


 

Product Specification

Model   HBT40-W01-2010          
Operating Frequency            20 ~ 32 kHz   
Max. Spindle Speed   24,000 rpm
Tool Interface   Thread Locking
CTS   70 bar

 
HIT HBT-40 ultrasonic grinding wheel toolholder module was used on surface grinding of silicon carbide ceramic
(Figure 1. HIT HBT-40 ultrasonic grinding wheel toolholder module was used on surface grinding of silicon carbide ceramic)



 

HIT's Goal in Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder


Through the assistance of HIT ultrasonic-assisted machining technology with the new product - Ultrasonic Grinding Wheel Toolholder, the goal is to enhance workpiece quality and tool life.




 

Ultrasonic-Assisted Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder: Machining Results

 

Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder: Machining Efficiency

with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, it not only enhanced surface quality of workpiece but also lowered spindle load
(Figure 2. with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, it not only enhanced surface quality of workpiece but also lowered spindle load)

 
  • To optimize the surface grinding process of silicon carbide (SiC) with HIT ultrasonic module, the high frequency micro-vibration helped reduce grinding force.
  • The 2.3x lower spindle load (from 30% down to 13%) reflected on the reduction in grinding force.


with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, 2.3x lower spindle load reflected on the reduction in grinding force
(Figure 3. with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, 2.3x lower spindle load reflected on the reduction in grinding force)



 

Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder: Surface Quality

with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, it helped remove tool marks on the surface of workpiece
(Figure 4. with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, it helped remove tool marks on the surface of workpiece)

 
  • To optimize the surface grinding process of silicon carbide (SiC) with HIT ultrasonic module, the high frequency micro-vibration helped reduce grinding force.  This can be seen on the reduction in spindle load.
  • In addition to 1.6x lower average surface roughness (Sa), the overall surface quality was improved with no tool marks on the surface.


with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, the average surface roughness was improved, which brought 1.6x better surface quality
(Figure 5. with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, the average surface roughness was improved, which brought 1.6x better surface quality)



 

Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder: Tool Life

with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, tool wear could be greatly reduced compared to that without ultrasonic
(Figure 6. with HIT new product HBT-40 ultrasonic grinding wheel toolholder module in surface grinding of silicon carbide, tool wear could be greatly reduced compared to that without ultrasonic)

 
  • To optimize the surface grinding process of silicon carbide (SiC) with HIT ultrasonic module, the reduction in grinding force not only brought much lower spindle load and improved surface quality but also helped reduce cutting heat, which prolonged the grinding ability of the wheel.
  • The high frequency micro-vibration of ultrasonic also provided better ceramic particles flushing mechanism.  As a result, ceramic particles were only partially stuck on the wheel surface.




 

HIT Ultrasonic Machining Technology Achievements in Surface Grinding of Silicon Carbide (SiC) with D100-Grinding Wheel Toolholder


(with HIT HBT40 Ultrasonic Grinding Wheel Toolholder)


🕜 Spindle Load - 2.3x lower, reflecting on the reduction in grinding force
📈 Surface Quality - 1.6x better, with no tool marks
⚙️ Tool Life - greatly reduced tool wear


 

Surface Grinding of Silicon Carbide (SiC) with Grinding Wheel Toolholder in Industry Application



Surface grinding of silicon carbide (SiC) is applied in the Semiconductor industry, especially used for electrostatic chucks (E-chuck, ESC), wafer susceptors, etc.


SiC (Silicon Carbide) has a Mohs hardness rating of 9, and it is an exceptional material choice for high-precision mechanical components.

This material bears excellent chemical and mechanical stability with high-temperature and thermal shock resistance, which also makes it an ideal material for semiconductor fabrication commodities, such as SiC substrates, SiC wafer susceptors, SiC wafer carriers, SiC E-chucks, etc.

Within the MOCVD reactor chamber, SiC wafer susceptors are used to carry the substrates.  The susceptors absorb thermal energy to help with film growth.  Therefore, the product quality of susceptors will have direct influence on the quality of semiconductor epilayer.


That was when HIT's Ultrasonic Machining Module came to help!  HIT offers a comprehensive solution in machining advanced materials.  With the assistance of HIT's Ultrasonic Machining Technology and HIT Ultrasonic Grinding Wheel Toolholder, clients stopped worrying about poor workpiece quality and tool life.  The surface quality can be enhanced while tool wear is greatly reduced.  HIT assures its clients of not only matching up with their requirements, but also achieving even better outcomes!




💡 Learn more about other HIT Ultrasonic Machining of Semiconductor Advanced Material case studies: 



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